IRFP150N Transistor Electronics Components electronic devices
N-Channel Power MOSFET
Features
• Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE™ and SABER© Electrical Models
- Spice and SABER© Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
| C.I MM74HC164MX |
FSC |
P0552AD/P9FAD |
SOP-14 |
| DIODO BYG23M-E3/TR |
VISHAY |
1632 |
SMA |
| DIODO SML4742A-E3/61 |
VISHAY |
1632/12 |
SMA |
| DIODO BYG23M-E3/TR |
VISHAY |
1632 |
SMA |
| DIODO SML4742A-E3/61 |
VISHAY |
1632/12 |
SMA |
| RES 2010 330R 5% CRCW2010330RJNEF |
VISHAY |
1612 |
SMD2010 |
| RES 2010 68K 5% CRCW201068K0JNEF |
VISHAY |
1612 |
SMD2010 |
| C.I MCP6S26-I/SL |
MICROCHIP |
16255C4 |
SOP-14 |
| ACOPLADOR. PC817A |
SHARP |
2016.08.10/H33 |
DIP-4 |
| TRANS 2SS52M |
Honeywell |
2SSM/523-LF |
TO-92 |
| C.I SCC2691AC1D24 |
|
1149+ |
SOP-24 |
| C.I TP3057WM |
TI |
XM33AF |
SOP-16 |
| C.I CD14538BE |
TI |
33ADS8K |
DIP-16 |
| C.I CL2N8-G |
MICROCHIP |
CL2C |
SOT-89 |
| C.I SN75179BP |
TI |
57C50DM |
DIP-8 |
| C.I L6219DS |
ST |
135 |
SOP-24 |
| CAP 1210 470PF 1KV NP0 CL32C471JIINNNE |
SAMSUNG |
AC7JO2H |
SMD1210 |
| INDUTOR 3.3UH SLF6045T-3R3N2R8-3PF |
TDK |
YA16H0945122/3R3 |
SMD6045 |
| CAP ELCO SMD 2.2UF 50V EEE-1HA2R2SR |
PAN |
Y1628F843536/2.2/50V/SYK |
SMD4*5.4 |
| C.I 24LC256-I/SN |
MICROCHIP |
1636M6G |
SOP-8 |
| CAP ELCO SMD 150UF 25V UCD1E151MNL1GS |
NICHICON |
160602/150/25V/H72 |
SMD8*10.5 |
| RES RC0805JR-0727RL |
YAGEO |
1538 |
SMD0805 |
| C.I SN75240PW |
TI |
11/A75240 |
MSOP-8 |
| RES RC0805JR-0715KL |
YAGEO |
1637 |
SMD0805 |
| CAP CER 0805 1UF 10V X7R LMK212BJ105MG-T |
TAIYOYUDEN |
1608 |
SMD0805 |
| CAP CER 0805 4.7UF 50V X5R CL21A475KBQNNNE |
SAMSUNG |
AC7JO2H |
SMD0805 |
| RES 0805 28K7 RC0805FR-0728K7L 1% |
YAGEO |
1638 |
SMD0805 |
| RES 3K3 5% CASE 0805RC0805JR-073K3L |
YAGEO |
1623 |
SMD0805 |
| TRIAC BTA26-600BRG |
ST |
628 |
TO-3P |
| CAP 0805 330NF 100V C2012X7S2A334K125AB |
TDK |
IB16F15763SD |
SMD0805 |
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . VDGR 100 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . VGS ±20 V
Drain Current Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . .. . . . . . . . . . . . . ID
Continuous (TC= 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 44 31
Figure 4 A A Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . .UIS
Figures 6, 14, 15 Power Dissipation . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 155 1.03 W W/oC
Operating and Storage Temperature . . . . . . . . . TJ, TSTG -55 to 175 oC
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. ... . .TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . Tpkg 300 260 oC oC
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IRFP150N Transistor Electronics Components electronic devices N-Channel Power MOSFET Images
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